Datasheet

© 2000 IXYS All rights reserved
1 - 4
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
1300 1200 MCO 500-12io1
1500 1400 MCO 500-14io1
1700 1600 MCO 500-16io1
1900 1800 MCO 500-18io1
I
TRMS
= 880 A
I
T(AV)M
= 560 A
V
RRM
= 1200-1800 V
17000
16000
1445000
1062000
845000
813000
960 100
1 500
1
1000
120
60
30
10
-40...140
140
-40...125
3000
3600
13000
14400
880
560
Features
●
International standard package
●
Direct copper bonded Al
2
O
3
-ceramic
with copper base plate
●
Planar passivated chips
●
Isolation voltage 3600 V~
●
UL registered E 72873
●
Keyed gate/cathode twin pins
Applications
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Advantages
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
4.5-7/40-62
11-13/97-115
650
Data according to IEC 60747 refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
MCO 500
High Power Thyristor Modules
3542
3
2
5
4
Symbol Test Conditions Maximum Ratings
I
TRMS
T
VJ
= T
VJM
A
I
T(AV)M
T
C
= 85°C; 180° sine A
I
TSM
T
VJ
= 45°C t = 10 ms (50 Hz) A
V
R
= 0 t = 8.3 ms (60 Hz) A
T
VJ
= T
VJM
t = 10 ms (50 Hz) A
V
R
= 0 t = 8.3 ms (60 Hz) A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz) A
2
s
V
R
= 0 t = 8.3 ms (60 Hz) A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz) A
2
s
V
R
= 0 t = 8.3 ms (60 Hz) A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
=A A/ms
f = 50 Hz, t
P
= 200 ms
V
D
= 2/3 V
DRM
I
G
= A, non repetitive, I
T
= I
T(AV)M
A/ms
di
G
/dt = A/ms
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
V/ms
R
GK
= ¥; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
= 30 msW
I
T
= I
T(AV)M
t
P
= 500 msW
P
GAV
W
V
RGM
V
T
VJ
°C
T
VJM
°C
T
stg
°C
V
ISOL
50/60 Hz, RMS t = 1 min V~
I
ISOL
£ 1 mA t = 1 s V~
M
d
Mounting torque (M6) Nm/lb.in.
Terminal connection torque (M8) Nm/lb.in.
Weight Typical including screws g
030