Datasheet

© 1997 IXYS All rights reserved
54
75 142
75 95
TBD
Fast Recovery MEA 95-06 DA V
RRM
= 600 V
Epitaxial Diode MEK 95-06 DA I
FAV
=95A
(FRED) Module MEE 95-06 DA t
rr
= 250 ns
TO-240 AA
1
2
3
Dimensions in mm (1 mm = 0.0394")
Features
l
International standard package
with DCB ceramic base plate
l
Planar passivated chips
l
Short recovery time
l
Low switching losses
l
Soft recovery behaviour
l
Isolation voltage 3600 V~
l
UL registered E 72873
Applications
l
Antiparallel diode for high frequency
switching devices
l
Free wheeling diode in converters
and motor control circuits
l
Inductive heating and melting
l
Uninterruptible power supplies (UPS)
l
Ultrasonic cleaners and welders
Advantages
l
High reliability circuit operation
l
Low voltage peaks for reduced
protection circuits
l
Low noise switching
l
Low losses
1 2 3 1 2 3 1 2 3
¬ I
FAV
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to DIN/IEC 747
IXYS reserves the right to change limits, test conditions and dimensions
90
-40...+150
-40...+125
11 0
3000
3600
12.7
9.6
50
280
2.5-4/22-35
2.5-4/22-35
1.01
2.85
0.550
0.450
2
0.5
34
100 1.36
1.55
300 2.05
2.09
100 250 300
300 14
200 21
V
RSM
V
RRM
Type
V V MEA95-06 DA MEK 95-06 DA MEE 95-06 DA
600 600
Symbol Test Conditions Maximum Ratings
I
FRMS
T
case
= °CA
I
FAV
¬ T
case
= °C; rectangular, d = 0.5 A
I
FRM
t
P
< 10 µs; rep. rating, pulse width limited by T
VJM
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
T
VJ
= 150°C; t = 10 ms (50 Hz), sine A
t = 8.3 ms (60 Hz), sine A
I
2
t T
VJ
= 45°C; t = 10 ms (50 Hz), sine A
2
s
t = 8.3 ms (60 Hz), sine A
2
s
T
VJ
= 150°C; t = 10 ms (50 Hz), sine A
2
s
t = 8.3 ms (60 Hz), sine A
2
s
T
VJ
°C
T
stg
°C
T
Hmax
°C
P
tot
T
case
= 25°CW
V
ISOL
50/60 Hz, RMS t = 1 min V~
I
ISOL
≤ 1 mA t = 1 s V~
M
d
Mounting torque (M5) Nm/lb.in.
Terminal connection torque (M5) Nm/lb.in.
d
S
Creep distance on surface mm
d
A
Strike distance through air mm
a Maximum allowable acceleration m/s
2
Weight g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
T
VJ
= 25°CV
R
= V
RRM
mA
T
VJ
= 25°CV
R
= 0.8 • V
RRM
mA
T
VJ
= 125°CV
R
= 0.8 • V
RRM
mA
V
F
I
F
= A; T
VJ
= 125°CV
T
VJ
=25°CV
I
F
= A; T
VJ
= 125°CV
T
VJ
=25°CV
V
T0
For power-loss calculations only V
r
T
T
VJ
= T
VJM
mΩ
R
thJH
DC current K/W
R
thJC
DC current K/W
t
rr
I
F
=A T
VJ
= 100°Cns
I
RM
V
R
=V T
VJ
= 25°CA
-di/dt = A/µsT
VJ
= 100°CA
1200
1300
1080
1170
7200
7100
5800
5700
95569B