Datasheet

© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
2
3
4
5
6
7
8
9
10
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R
G
- Ohms
E
off
- MilliJoules
2
4
6
8
10
12
14
16
18
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
60
80
100
120
140
160
180
200
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R
G
- Ohms
t
f i
- Nanoseconds
100
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1
2
3
4
5
6
7
8
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1

V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
1
2
3
4
5
6
7
8
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
2
4
6
8
10
12
14
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1

V
GE
= 15V
V
CE
= 600V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
180
200
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1

, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
70
80
90
100
110
120
130
140
150
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
140
160
180
200
220
240
260
280
300
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1

, V
GE
= 15V
V
CE
= 600V
I
C
= 100A
I
C
= 50A