Datasheet

© 2013 IXYS CORPORATION, All Rights Reserved
IXYK120N120C3
IXYX120N120C3
V
CES
= 1200V
I
C110
= 120A
V
CE(sat)





3.20V
t
fi(typ)
= 96ns
DS100451B(9/13)
High-Speed IGBTs
for 20-50 kHz Switching
Features

Optimized for Low Switching Losses

Square RBSOA

International Standard Packages

Positive Thermal Coefficient of
Vce(sat)

Avalanche Rated

High Current Handling Capability
Advantages

High Power Density

Low Gate Drive Requirement
Applications

High Frequency Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 1200 V
V
GE(th)
I
C
= 500A, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 25 A
T
J
= 150C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15V, Note 1 2.55 3.20 V
T
J
= 150C 3.40 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 175°C 1200 V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1M 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C (Chip Capability) 240 A
I
LRMS
Terminal Current Limit 160 A
I
C110
T
C
= 110°C 120 A
I
CM
T
C
= 25°C, 1ms 700 A
I
A
T
C
= 25°C 60 A
E
AS
T
C
= 25°C 2 J
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 1 I
CM
= 240 A
(RBSOA) Clamped Inductive Load V
CE
 V
CES
P
C
T
C
= 25°C 1500 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque (TO-264) 1.13/10 Nm/lb.in
F
C
Mounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264 10 g
PLUS247 6 g
1200V XPT
TM
IGBTs
GenX3
TM
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXYK)
E
G
C
PLUS247 (IXYX)
G
Tab
Tab
E
C
G