Datasheet

© 2012 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0
10
20
30
40
50
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
10
30
50
70
90
110
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
20 30 40 50 60 70 80
I
C
- Amperes
E
off
- MilliJoules
0
5
10
15
20
25
30
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
5
10
15
20
25
30
35
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
Ω
,
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
20 30 40 50 60 70 80
I
C
- Amperes
t
f i
- Nanoseconds
60
80
100
120
140
160
180
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC, 125ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
0
20
40
60
80
100
120
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
110
120
130
140
150
160
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 40A, 80A