Datasheet

© 2012 IXYS CORPORATION, All Rights Reserved
IXYH40N120C3D1
V
CES
= 1200V
I
C90
= 40A
V
CE(sat)
≤ ≤
≤ ≤
≤ 4.0V
t
fi(typ)
= 38ns
DS100417B(02/13)
G = Gate C = Collector
E = Emitter Tab = Collector
TO-247 AD
G
C
E
Tab
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 1200 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 50 μA
T
J
= 125°C 500 μA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 40A, V
GE
= 15V, Note 1 4.0 V
T
J
= 125°C 4.8 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C (Chip Capability) 64 A
I
C90
T
C
= 90°C 40 A
I
F110
T
C
= 110°C 25 A
I
CM
T
C
= 25°C, 1ms 105 A
I
A
T
C
= 25°C 20 A
E
AS
T
C
= 25°C 400 mJ
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 10Ω I
CM
= 80 A
(RBSOA) Clamped Inductive Load @V
CE
≤ V
CES
P
C
T
C
= 25°C 480 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in.
Weight 6g
Features
z
Optimized for Low Switching Losses
z
Square RBSOA
z
Positive Thermal Coefficient of
Vce(sat)
z
Anti-Parallel Ultra Fast Diode
z
Avalanche Rated
z
High Current Handling Capability
z
International Standard Package
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
z
High Frequency Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
1200V XPT
TM
IGBT
GenX3
TM
w/ Diode