Datasheet

© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25° C to 150° C 200 V
V
DGR
T
J
= 25° C to 150° C; R
GS
= 1 MΩ 200 V
V
GSS
Continous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25° C96A
I
D(RMS)
External lead current limit 75 A
I
DM
T
C
= 25° C, pulse width limited by T
JM
225 A
I
AR
T
C
= 25° C60A
E
AR
T
C
= 25° C50mJ
E
AS
T
C
= 25° C 1.5 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 10 V/ns
T
J
≤ 150° C, R
G
= 4 Ω
P
D
T
C
= 25° C 600 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 s 260 °C
M
d
Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-247 6.0 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99117E(10/05)
Symbol Test Conditions Characteristic Values
(T
J
= 25° C, unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 µA 200 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 5.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 150° C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
24 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
Power MOSFET
IXTH 96N20P V
DSS
= 200 V
IXTQ 96N20P I
D25
= 96 A
IXTT 96N20P R
DS(on)
≤ ≤
≤ ≤
≤ 24 m
ΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-3P (IXTQ)
G
D
S
TO-268 (IXTT)
G
S
D (TAB)
G
D
S
TO-247 (IXTH)
(TAB)
(TAB)