Datasheet

© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C -100 V
V
DGR
T
J
= 25°C to 150°C, R
GS
= 1MΩ -100 V
V
GSS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C - 90 A
I
DM
T
C
= 25°C, Pulse Width Limited by T
JM
- 225 A
I
A
T
C
= 25°C - 90 A
E
AS
T
C
= 25°C 2.5 J
dV/dt I
S
≤ I
DM
, V
DD
≤ V
DSS
, T
J
≤ 150°C 10 V/ns
P
D
T
C
= 25°C 462 W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
T
L
1.6mm (0.062 in.) from Case for 10s 300 °C
T
SOLD
Plastic Body for 10s 260 °C
M
d
Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.
Weight TO-247 6 g
TO-268 5 g
DS99986A(03/09)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
BV
DSS
V
GS
= 0V, I
D
= - 250µA -100 V
V
GS(th)
V
DS
= V
GS
, I
D
= - 250µA - 2.0 - 4.0 V
I
GSS
V
GS
= ±20V, V
DS
= 0V ±100 nA
I
DSS
V
DS
= V
DSS
, V
GS
= 0V - 25 µA
T
J
= 125°C - 200 µA
R
DS(on)
V
GS
= -10V, I
D
= 0.5 • I
D25
, Note 1 25 mΩ
PolarP
TM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
V
DSS
= - 100V
I
D25
= - 90A
R
DS(on)
≤≤
≤≤
≤ 25m
ΩΩ
ΩΩ
Ω
IXTH90P10P
IXTT90P10P
Features:
z
International Standard Packages
z
Avalanche Rated
z
Fast Intrinsic Diode
z
Rugged PolarP
TM
Process
z
Low Package Inductance
Advantages
z
Easy to Mount
z
Space Savings
z
High Power Density
G = Gate D = Drain
S = Source TAB = Drain
TO-268 (IXTT)
G
S
(TAB)
TO-247 (IXTH)
(TAB)
S
G
D
Applications
z
High-Side Switches
z
Push Pull Amplifiers
z
DC Choppers
z
Automatic Test Equipment
z
Current Regulators