Datasheet

© 2005 IXYS All rights reserved
3 - 4
0527
IXLF 19N250A
IXYS reserves the right to change limits, test conditions and dimensions.
0 10203040
10
100
1000
10000
0123456789
0
20
40
60
80
100
0123456789
0
10
20
30
40
50
13 V
11 V
T
J
= 125°C
15 V
6 7 8 9 10 11 12 13 14 15
0
10
20
30
40
50
60
70
80
13 V
15 V
9 V
9 V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
CE
I
C
pF
Capacitance
T
J
= 25°C
V
GE
= 17 V
11 V
A
V
GE
= 17 V
V
CE
= 20 V
T
J
= 125°C
T
J
= 25°C
C
oes
C
ies
C
res
0 50 100 150
0
5
10
15
20
nC
Q
G
V
V
GE
V
CE
= 1500 V
I
C
= 19 A
T
J
= 25°C
0 400 800 1200 1600 2000 2400
0
20
40
60
80
V
CE
I
CM
V
A
R
G
= 47Ω
T
J
= 125°C
V
CEK
< V
CES
f = 1 Mhz
Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics
Fig. 3 Typ. Transfer Characteristics Fig. 4 Capacitance curves
Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area
RBSOA