Datasheet

IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH30N120B3D1
IXGT30N120B3D1
IXYS REF: G_30N120B3(4A)5-06-08-A
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
0
10
20
30
40
50
60
70
80
90
100
110
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r
- Nanoseconds
8
10
12
14
16
18
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5Ω , V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC, 25ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
10
20
30
40
50
60
70
80
90
100
110
120
130
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
14
15
16
17
18
19
20
21
22
23
24
25
26
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5Ω , V
GE
= 15V
V
CE
= 960V
I
C
= 30A
I
C
= 60A
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
0
20
40
60
80
100
120
140
160
180
5 7 9 1113151719212325
R
G
- Ohms
t
r
- Nanoseconds
14
18
22
26
30
34
38
42
46
50
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 30A
I
C
= 60A