Datasheet

© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
300 μA
V
GE
= 0V T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 30A, V
GE
= 15V, Note 1 2.96 3.5 V
T
J
= 125°C 2.95 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C110
T
C
= 110°C30A
I
F110
T
C
= 110°C28A
I
CM
T
C
= 25°C, 1ms 150 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 5Ω I
CM
= 60 A
(RBSOA) Clamped inductive load @ 0.8 • V
CE
P
C
T
C
= 25°C 300 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (TO-247) 1.13 / 10 Nm/lb.in.
T
L
Maximum lead temperature for soldering 300 °C
T
SOLD
1.6mm (0.062 in.) from case for 10s 260 °C
Weight TO-247 6 g
TO-268 4 g
DS99566A(05/08)
V
CES
= 1200V
I
C110
= 30A
V
CE(sat)
≤≤
≤≤
≤£ 3.5V
t
fi(typ)
= 204ns
GenX3
TM
1200V IGBT
High speed Low Vsat PT
IGBTs 3-20 kHz switching
IXGH30N120B3D1
IXGT30N120B3D1
TO-247 AD (IXGH)
G
C
E
G = Gate C = Collector
E = Emitter TAB = Collector
C (TAB)
TO-268 (IXGT)
G
E
C (TAB)
Features
z
Optimized for low conduction and
switching losses
z
Square RBSOA
z
Anti-parallel ultra fast diode
z
International standard packages
Advantages
z
High power density
z
Low gate drive requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Welding Machines