Datasheet
© 2009 IXYS CORPORATION, All Rights Reserved
IXGN200N60B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
1.5
2.0
2.5
3.0
3.5
4.0
4.5
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R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
120
160
200
240
280
320
360
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
280
320
360
400
440
480
520
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1, V
GE
= 15V
V
CE
= 300V
I
C
= 50A, 100A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
230
240
250
260
270
280
290
300
310
320
330
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R
G
- Ohms
t
f i
- Nanoseconds
300
400
500
600
700
800
900
1000
1100
1200
1300
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
E
off
- MilliJoules
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
,
V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 1
,
V
GE
= 15V
V
CE
= 300V
I
C
= 100A
I
C
= 50A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
120
140
160
180
200
220
240
260
280
300
320
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
f i
- Nanoseconds
300
320
340
360
380
400
420
440
460
480
500
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
, V
GE
= 15V
V
CE
= 300V
T
J
= 125ºC
T
J
= 25ºC