Datasheet
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N60B3
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10 V, Note 1 95 160 S
C
ies
26 nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 1260 pF
C
res
97 pF
Q
g(on)
750 nC
Q
ge
I
C
= 100V, V
GE
= 15 V, V
CE
= 0.5 • V
CES
115 nC
Q
gc
245 nC
t
d(on)
44 ns
t
ri
83 ns
E
on
1.6 mJ
t
d(off)
310 450 ns
t
fi
183 300 ns
E
off
2.9 4.5 mJ
t
d(on)
42 ns
t
ri
80 ns
E
on
2.4 mJ
t
d(off)
430 ns
t
fi
300 ns
E
off
4.2 mJ
R
thJC
0.15 °C/W
R
thCK
0.05 °C/W
Inductive load, T
J
= 25°C
I
C
= 100A, V
GE
= 15V
V
CE
= 300V, R
G
= 1Ω
Note 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
SOT-227B miniBLOC
Inductive load, T
J
= 125°C
I
C
= 100A, V
GE
= 15V
V
CE
= 300V, R
G
= 1Ω