Datasheet

© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 300 A
I
C110
T
C
= 110°C 200 A
I
LRMS
Terminal Current Limit 200 A
I
CM
T
C
= 25°C, 1ms 1200 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 1Ω I
CM
= 300 A
(RBSOA) Clamped Inductive Load V
CE
≤ V
CES
P
C
T
C
= 25°C 830 W
T
J
- 55 ... +150 °C
T
JM
150 °C
T
stg
- 55 ... +150 °C
V
ISOL
50/60Hz t = 1min 2500 V~
I
ISOL
≤ 1mA t = 1s 3000 V~
M
d
Mounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in.
Weight 30 g
Features
z
International Standard Package
miniBLOC
z
UL Recognized
z
Aluminium Nitride Isolation
- High Power Dissipation
z
Isolation Voltage 3000 V~
z
Very High Current IGBT
z
Low V
CE(sat)
for Minimum on-state
Conduction Losses
z
MOS Gate Turn-On
- Drive Simplicity
z
Low Collector-to-Case Capacitance
(< 50 pF)
z
Low Package Inductance (< 5 nH)
- Easy to Drive and to Protect
Advantages
z
High Power Density
z
Low Gate Drive Requirement
Applications
• Switch-Mode and Resonant-Mode
Power Supplies
• Uninterruptible Power Supplies (UPS)
• DC Choppers
• AC Motor Speed Drives
• DC Servo and Robot Drives
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 50 μA
T
J
= 125°C 5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±100 nA
V
CE(sat)
I
C
= 100A, V
GE
= 15V, Note 1 1.35 1.50 V
I
C
= 200A, 1.65 V
T
J
= 125°C 1.75 V
DS99941B(8/09)
GenX3
TM
600V IGBT
IXGN200N60B3
V
CES
= 600V
I
C110
= 200A
V
CE(sat)
≤≤
≤≤
≤ 1.50V
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
c Either Emitter Terminal can be used as
Main or Kelvin Emitter
G
E c
E c
C
E153432
Medium-Speed Low-Vsat PT
IGBT for 5-40kHz Switching