Datasheet

© 2008 IXYS CORPORATION, All rights reserved
GenX3
TM
600V IGBT
Symbol Test Conditions Maximum Ratings
V
CES
T
C
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C, R
GE
= 1MΩ 600 V
V
GES
Continuous ± 20 V
V
GEM
Transient ± 30 V
I
C25
T
C
= 25°C (limited by leads) 75 A
I
C110
T
C
= 110°C 72 A
I
CM
T
C
= 25°C, 1ms 400 A
SSOA V
GE
= 15V, T
VJ
= 125°C, R
G
= 3Ω I
CM
= 150 A
(RBSOA) Clamped inductive load @ ≤ 600V
P
C
T
C
= 25°C 540 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6mm (0.062 in.) from case for 10s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS99759B(07/08)
IXGH72N60A3
IXGT72N60A3
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
CES
I
C
= 250μA, V
GE
= 0V 600 V
V
GE(th)
I
C
= 250μA, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
75 μA
V
GE
= 0V T
J
= 125°C 750 μA
I
GES
V
CE
= 0V, V
GE
= ± 20V ±100 nA
V
CE(sat)
I
C
= 60A, V
GE
= 15V, Note 1 1.35 V
V
CES
= 600V
I
C110
= 72A
V
CE(sat)
≤≤
≤≤
≤ 1.35V
t
fi(typ)
= 250ns
TO-247 (IXGH)
G
C
E
C (TAB)
TO-268 (IXGT)
G
E
C (TAB)
Ultra Low Vsat PT IGBT for
up to 5kHz switching
Features
z
Optimized for low conduction losses
z
Square RBSOA
z
International standard packages
Advantages
z
High power density
z
Low gate drive requirement
Applications
z
Power Inverters
z
UPS
z
Motor Drives
z
SMPS
z
PFC Circuits
z
Battery Chargers
z
Welding Machines
z
Lamp Ballasts
z
Inrush Current Protection Circuits