Datasheet
© 2009 IXYS CORPORATION, All rights reserved
IXGA48N60C3 IXGH48N60C3
IXGP48N60C3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0 5 10 15 20 25 30 35
R
G
- Ohms
E
off
- MilliJoules
0.2
0.6
1.0
1.4
1.8
2.2
2.6
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
I
C
= 15A
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
20
40
60
80
100
120
140
160
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
50
60
70
80
90
100
110
120
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 400V
I
C
= 15A
I
C
= 60A
I
C
= 30A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
70
75
80
85
90
95
100
105
110
115
120
125
130
0 5 10 15 20 25 30 35
R
G
- Ohms
t
f
- Nanoseconds
50
75
100
125
150
175
200
225
250
275
300
325
350
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
V
GE
= 15V
V
CE
= 400V
I
C
= 30A
I
C
= 15A
I
C
= 60A
Fig. 13. Inductive Swiching
Energy Loss vs. Collector Current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC, 25ºC
Fig. 14. Inductive Swiching
Energy Loss vs. Junction Temperature
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 3
,
V
GE
= 15V
V
CE
= 400V
I
C
= 60A
I
C
= 30A
I
C
= 15A
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
20
30
40
50
60
70
80
90
100
110
120
130
140
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
50
55
60
65
70
75
80
85
90
95
100
105
110
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3
, V
GE
= 15V
V
CE
= 400V
T
J
= 125ºC
T
J
= 25ºC