Datasheet

IXYS reserves the right to change limits, test conditions and dimensions.
IXGA48N60C3 IXGH48N60C3
IXGP48N60C3
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 30A, V
CE
= 10V, Note 1 20 30 S
C
ies
1960 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 207 pF
C
res
66 pF
Q
g
77 nC
Q
ge
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
16 nC
Q
gc
32 nC
t
d(on)
19 ns
t
ri
26 ns
E
on
0.41 mJ
t
d(off)
60 100 ns
t
fi
38 ns
E
off
0.23 0.42 mJ
t
d(on)
19 ns
t
ri
26 ns
E
on
0.65 mJ
t
d(off)
92 ns
t
fi
95 ns
E
off
0.57 mJ
R
thJC
0.42 °C/W
R
thCS
(TO-247) 0.21 °C/W
(TO-220) 0.50 °C/W
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXGP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
Inductive Load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 3Ω
TO-263 (IXGA) Outline
Inductive Load, T
J
= 125°C
I
C
= 30A, V
GE
= 15V
V
CE
= 400V, R
G
= 3Ω