Datasheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH28N60B3D1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= I
C110
, V
CE
= 10V, Note 1 18 30 S
C
ies
2320 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 176 pF
C
res
24 pF
Q
g
62 nC
Q
ge
I
C
= I
C110
, V
GE
= 15V, V
CE
= 0.5 • V
CES
11 nC
Q
gc
23 nC
t
d(on)
19 ns
t
ri
24 ns
E
on
0.34 mJ
t
d(off)
125 200 ns
t
fi
100 160 ns
E
off
0.65 1.2 mJ
t
d(on)
19 ns
t
ri
26 ns
E
on
0.6 mJ
t
d(off)
180 ns
t
fi
170 ns
E
off
1.0 mJ
R
thJC
0.66 °C/W
R
thCS
0.21 °C/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= 24A, V
GE
= 15V
V
CE
= 400V, R
G
= 10Ω
Inductive load, T
J
= 125
°°
°°
°C
I
C
= 24A, V
GE
= 15V
V
CE
= 400V, R
G
= 10Ω
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
F
I
F
= 24A, V
GE
= 0V, Note 1 2.5 V
T
J
= 150°C 1.7 V
I
RM
I
F
= 24A, V
GE
= 0V, -di
F
/dt = 100A/μs 5 A
V
R
= 100V
t
rr
I
F
= 1A, -di
F
/dt =100A/μs, V
R
= 30V 25 ns
T
J
= 100°C 100 ns
R
thJC
1.0 K/W