Datasheet

© 2005 IXYS All rights reserved
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
Fig. 14. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 850V
I
C
= 8A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p
F
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-off
Sw itching Time on Temperature
50
75
100
125
150
175
200
225
250
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
I
C
= 16A
t
d(off)
t
fi
- - - - - -
R
G
= 10Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 8A
I
C
= 32A
Fig. 16. Re ve r s e - Bias Safe
Operating Area
0
5
10
15
20
25
30
35
40
45
100 300 500 700 900 1100 1300 1500 1700
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
Fig. 17. Maximum Transient Thermal Resistance
0.1
1
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
( ºC / W )