Datasheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C25
; V
CE
= 10 V 7 13 S
Note 2
C
ies
1620 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 16N170A 83 pF
16N170AH1 110 pF
C
res
31 pF
Q
g
83 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
10 nC
Q
gc
31 nC
t
d(on)
36 ns
t
ri
57 ns
t
d(off)
160 300 ns
t
fi
70 150 ns
E
off
0.85 1.5 mJ
t
d(on)
38 ns
t
ri
59 ns
E
on
16N170A 1.5 mJ
16N170AH1 2.5 mJ
t
d(off)
175 ns
t
fi
155 ns
E
off
2.0 mJ
R
thJC
0.65 K/W
R
thCK
(TO-247) 0.25 K/W
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C25
, V
GE
= 15 V, R
G
= 10 Ω
V
CE
= 0.5 V
CES
,Note 3
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C25
, V
GE
= 15 V, R
G
= 10 Ω
V
CE
= 0.5 V
CES
,Note 3
Notes: 1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
3. Switching times may increase for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 AD Outline
TO-268 Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
1
2.7 2.9 .106 .114
A
2
.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
2
1.9 2.1 .75 .83
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
1
13.3 13.6 .524 .535
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
Reverse Diode (FRED) Characteristic Values
Symbol Test Conditions min. typ. max.
(T
J
= 25°C unless otherwise specified)
V
F
I
F
= 20A, V
GE
= 0 V, Note 2 2.5 2.9 V
T
J
= 125°C 2.5 V
t
rr
I
F
= 20A, V
GE
= 0 V, -di
F
/dt = 450 A/μs 230 ns
V
R
= 1200 V T
J
= 125°C 400 ns
I
RM
23 A
T
J
= 125°C27 A
R
thJC
0.9 K/W