Datasheet

IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 16N170
IXGT 16N170
Fig. 12. Capacitance
10
10 0
10 0 0
10 0 0 0
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - pF
C
ies
C
oes
C
res
f = 1 M Hz
Fig. 11. Gate Charge
0
3
6
9
12
15
0 1020304050607080
Q
G
- nanoCoulombs
V
G E
- Volts
V
C E
= 600V
I
C
= 1 6A
I
G
= 1 0mA
Fi
g
. 7. Transconductance
0
3
6
9
12
15
18
21
0 8 16 24 32 40 48 56
I
C
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 8. Dependence of E
off
on R
G
8
10
12
14
16
18
20
22
24
0 102030405060
R
G
- Ohms
E
off
- milliJoules
I
C
= 16A
I
C
= 32A
T
J
= 125
º
C
V
G E
= 15V
V
C E
= 1360V
Fig. 9. Dependence of E
off
on I
C
10
12
14
16
18
20
22
24
16 18 20 22 24 26 28 30 32
I
C
- Amperes
E
off
- milliJoules
R
G
= 10 Ohms
R
G
= 50 Ohms
T
J
= 125
º
C
V
G E
= 15V
V
C E
= 1360V
Fig. 10. Dependence of E
off
on Temperature
7
10
13
16
19
22
25
28
31
0255075100125150
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 32A
I
C
= 16A
V
G E
= 15V
V
C E
= 1360V
R
G
= 10 Ohms
R
G
= 50 Ohms - - - - -