Datasheet

1 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 600 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MW 600 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C44A
I
DM
T
C
= 25°C, pulse width limited by T
JM
176 A
I
AR
T
C
= 25°C44A
E
AR
T
C
= 25°C60mJ
E
AS
T
C
= 25°C3J
dv/dt I
S
£ I
DM
, di/dt £ 100 A/ms, V
DD
£ V
DSS
5 V/ns
T
J
£ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 560 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.063 in.) from case for 10 s 300 °C
M
d
Mounting torque TO-264 0.4/6 Nm/lb.in.
Weight PLUS 247 6 g
TO-264 10 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3mA 600 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA 2.5 4.5 V
I
GSS
V
GS
= ±20 V, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
T
J
= 25°C 100 mA
V
GS
= 0 V T
J
= 125°C2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 • I
D25
130 mW
Note 1
Single MOSFET Die
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
TM
package for clip or spring
mounting
• Space savings
• High power density
HiPerFET
TM
Power MOSFETs
98611B (7/00)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
IXFX 44N60 V
DSS
= 600 V
IXFK 44N60 I
D25
=44A
R
DS(on)
= 130 mW
t
rr
£ 250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
IXYS reserves the right to change limits, test conditions, and dimensions.