Datasheet
© 2009 IXYS CORPORATION, All Rights Reserved
V
CES
= 4000V
I
C90
= 40A
V
CE(sat)
≤≤
≤≤
≤ 3.5V
IXEL40N400
DS99385A(12/09)
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 125°C 4000 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C90
T
C
= 90°C 40 A
I
CM
Pulse Width Limited by T
JM
, 1ms, V
GE
= 20V 250 A
P
C
T
C
= 25°C 380 W
T
J
- 40 ... +125 °C
T
JM
125 °C
T
stg
- 40 ... +125 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062 in.) from Case for 10s 260 °C
V
ISOL
I
ISOL
< 1mA, 50/60 Hz, t = 1 minute 4000 V~
F
C
Mounting Force 30..170 / 7..36 Nm/lb-in.
Weight 8g
Very High Voltage
IGBT
G = Gate C = Collector
E = Emitter
ISOPLUS i5-Pak
TM
G
C
E
Isolated Tab
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, Unless Otherwise Specified) Min. Typ. Max.
V
GE(th)
I
C
= 10mA, V
CE
= V
GE
5.5 7.0 V
I
CES
V
CE
= V
CES
, V
GE
= 0V 100 μA
Note 2, T
J
= 125°C 1.5 mA
I
GES
V
CE
= 0V, V
GE
= ±20V ±500 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15V, Note 1 2.5 3.5 V
T
J
= 125°C 3.0 V
t
fi(typ)
= 425ns
Preliminary Technical Information
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
UL Recognized Package
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
Advantages
High Power Density
Easy to Mount
Applications
Capacitor Discharge
Pulser Circuits
( Electrically Isolated Tab)




