Datasheet

© 2000 IXYS All rights reserved
2 - 4
IXDH 20N120
IXDH 20N120 D1
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
C
ies
1000 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 150 pF
C
res
70 pF
Q
g
I
C
= 20 A, V
GE
= 15 V, V
CE
= 0.5 V
CES
70 nC
t
d(on)
100 ns
t
r
75 ns
t
d(off)
500 ns
t
f
70 ns
E
on
3.1 mJ
E
off
2.4 mJ
R
thJC
0.63 K/W
R
thCH
Package with heatsink compound 0.25 K/W
Inductive load, T
J
= 125°C
I
C
= 20 A, V
GE
= ±15 V,
V
CE
= 600 V, R
G
= 82 W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
V
F
I
F
= 20 A, V
GE
= 0 V 2.6 2.8 V
I
F
= 20 A, V
GE
= 0 V, T
J
= 125°C 2.1 V
I
F
T
C
= 25°C 33 A
T
C
= 90°C 20 A
I
RM
I
F
= 20 A, -di
F
/dt = 400 A/µs, V
R
= 600 V 15 A
t
rr
V
GE
= 0 V, T
J
= 125°C 200 ns
t
rr
I
F
= 1 A, -di
F
/dt = 100 A/µs, V
R
= 30 V, V
GE
= 0 V 40 ns
R
thJC
1.6 K/W
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
ÆP 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC