Datasheet

© 2000 IXYS All rights reserved
1 - 4
Symbol Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 1200 V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 20 kW 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 38 A
I
C90
T
C
= 90°C 25 A
I
CM
T
C
= 90°C, t
p
= 1 ms 50 A
RBSOA V
GE
= ±15 V, T
J
= 125°C, R
G
= 82 W I
CM
= 35 A
Clamped inductive load, L = 30 µH V
CEK
< V
CES
t
SC
V
GE
= ±15 V, V
CE
= V
CES
, T
J
= 125°C 10 µs
(SCSOA) R
G
= 82 W, non repetitive
P
C
T
C
= 25°C IGBT 200 W
Diode 75 W
T
J
-55 ... +150 °C
T
stg
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque 0.8 - 1.2 Nm
Weight 6g
V
CES
= 1200 V
I
C25
= 38 A
V
CE(sat) typ
= 2.4 V
Features
●
NPT IGBT technology
●
low saturation voltage
●
low switching losses
●
square RBSOA, no latch up
●
high short circuit capability
●
positive temperature coefficient for
easy paralleling
●
MOS input, voltage controlled
●
optional ultra fast diode
●
International standard package
Advantages
●
Space savings
●
High power density
Typical Applications
●
AC motor speed control
●
DC servo and robot drives
●
DC choppers
●
Uninteruptible power supplies (UPS)
●
Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
IXDH 20N120 D1
Symbol Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
(BR)CES
V
GE
= 0 V 1200 V
V
GE(th)
I
C
= 0.6 mA, V
CE
= V
GE
4.5 6.5 V
I
CES
V
CE
= V
CES
T
J
= 25°C 1 mA
T
J
= 125°C 2 mA
I
GES
V
CE
= 0 V, V
GE
= ± 20 V ± 500 nA
V
CE(sat)
I
C
= 20 A, V
GE
= 15 V 2.4 3 V
TO-247 AD
G = Gate, E = Emitter
C = Collector , TAB = Collector
G
E
C
C (TAB)
IXDH 20N120 IXDH 20N120 D1
G
C
E
G
C
E
031