Datasheet

IXA12IF1200PB
preliminary
0123
0
4
8
12
16
20
0 4 8 12 16 20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01234
0
4
8
12
16
20
V
CE
[V]
I
C
[A]
9V
11 V
5678910111213
0
4
8
12
16
20
0102030
0
5
10
15
20
V
GE
[V]
T
VJ
=25°C
T
VJ
=125°C
T
VJ
=25°C
13 V
80 120160200240
0.0
0.4
0.8
1.2
1.6
2.0
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
Q
G
[nC]
R
G
[Ω]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
=10A
V
CE
= 600 V
V
GE
=±15V
T
VJ
=125°C
R
G
=100
V
CE
=600V
V
GE
=±15V
T
VJ
=125°C
I
C
=10A
V
CE
=600V
V
GE
=15V
T
VJ
=125°C
T
VJ
=125°C
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
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