Datasheet

IXA12IF1200PB
preliminary
T = °C
I
F25
A
22T = 25°C
C
Forward current
Reverse recovery time
V = V
Q
T = 25°C
Reverse recovery charge
V
1.95
µC
I = A
VJ
R
VJ
Symbol Definition
Ratings
typ. max.min.Conditions
Uni
t
F
rr
1.3
350 nst
rr
Maximum reverse recovery current
10.5
A
0.35
R
thJC
Thermal resistance juntion to case
1.8 K/W
di /dt = - A/µs;
F
250
IGBT
1.1
V
V
0
Diode
1.25
V
I
F
T = °C
C
A
14
V
F
Forward voltage
T = °C125
VJ
V
1.95
I
RM
E
rec(off)
Reverse recovery losses at turn-off
I = A
F
Symbol Definition
Ratings
typ. max.min.
Uni
t
I
V
0
R
0
R
0
V
0
R
0
153
85
Ω
m
Ω
m
125
2.2
600
Diode
Equivalent Circuits for Simulation
R1 R2 R3 R4
C1 C2 C3 C4
tbd
R
1
tbd
DiodeIGBT
R
2
R
3
R
4
tbd
tbd
tbd
tbd
tbd
tbd
tbd
τ
1
tbd
τ
2
τ
3
τ
4
tbd
tbd
tbd
tbd
tbd
tbd
T = °C
VJ
150
T = °C
VJ
150
10
10
100
100
mJ
IXYS reserves the right to change limits, conditions and dimensions. 20110330a
Data according to IEC 60747and per diode unless otherwise specified
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