Datasheet

© 2002 IXYS All rights reserved
1 - 2
0202
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 600 V
I
D(AV)M
= 11 A
C
junction
= 21 pF
Silicon Carbide
Schottky
Rectifier Bridge
in ISOPLUS i4-PAC
TM
1
5
Advanced Technical Information
FBS 16-06SC
Features
• Silicon Carbide Schottky Diodes
- no reverse recovery at turn off - only
charge of junction capacity - soft turn
off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
• ISOPLUS i4-PAC(TM) package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• output rectifiers of high end switched
mode power supplies
• other high frequency rectifiers
Rectifier Bridge
Symbol Conditions Maximum Ratings
V
RRM
600 V
I
FAV
T
C
= 90°C; sine 180° (per diode) 5 A
I
D(AV)M
T
C
= 90°C 11 A
I
FSM
T
VJ
= 25°C; t = 10 ms; sine 50 Hz 20 A
P
tot
T
C
= 25°C (per diode) 27 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 6 A; T
VJ
= 25°C 1.5 1.8 V
T
VJ
= 125°C 1.6 V
I
R
V
R
= V
RRM
;T
VJ
= 25°C 0.2 mA
T
VJ
= 125°C 0.05 mA
C
J
V
R
= 400 V; T
VJ
= 125°C 21 pF
R
thJC
(per diode) 5.6 K/W
R
thJS
8.6 K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.