Datasheet
© 2002 IXYS All rights reserved
2 - 2
0.0 0.2 0.4 0.6
1
10
100
0 1020304050
0.1
1
10
100
1000
10000
10 30 500 204060
0
5
10
15
20
25
30
35
40
45
0.001 0.01 0.1 1 10
0.1
1
04080120160
0
10
20
30
40
50
60
70
80
I
F(AV)
T
C
C
I
F(AV)
t
s
K/W
10 100 1000 10000
100
1000
10000
I
FSM
t
P
A
0 10203040
100
1000
10000
C
T
I
R
I
F
A
V
F
V
R
V
R
V
pF
V
mA
A
P
(AV)
W
Z
thJC
V
Single Pulse
0.05
DSSK 80-0045B
A
s
T
VJ
=150 C
125 C
100 C
75 C
25 C
T
VJ
=
150 C
125 C
25 C
T
VJ
= 25 C
d=0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
0.08
D=0.5
0.25
0.17
DC
50 C
0.33
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
Fig. 2 Typ. value of reverse current I
R
versus reverse voltage V
R
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 4 Average forward current I
F(AV)
versus case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case at various duty cycles
232
DSSK 80-0045B
Note: All curves are per diode


