Datasheet

DSEI2x101-06A
200 600 10000 400 800
120
140
160
180
200
220
240
260
0.001 0.01 0.1 1 10
0.1
1
0 50 100 150
0.4
0.6
0.8
1.0
1.2
1.4
0 200 400 600 800 1000
10
30
50
0
20
40
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
200 600 10000400800
10
30
50
70
0
20
40
60
80
100 1000
0
1
2
3
4
5
6
7
0.0 0.5 1.0 1.5
0
25
50
75
100
125
150
Single Pulse
0.05
0.1
0.2
0.3
0.5
D=0.7
0.05
DSEI 2x101-06
t [s]
I
F
[A]
-di
F
/dt [A/µs]V
F
[V]
Q
r
[µC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
V
FR
[V]
t
rr
[ns]
t
fr
[µs]
V
FR
T
VJ
[°C]
K
f
Z
thJC
[K/W]
I
RM
Q
rr
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
rr
versus -di
F
/dt
Fig. 4 Dyn. parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
i R
thi
t
i
[K/W] [s]
1 0.020 0.00002
2 0.020 0.00081
3 0.076 0.01
4 0.240 0.94
5 0.114 0.45
T
VJ
= 150°C
100°C
25°C
I
F
= 200 A
100 A
50 A
T
VJ
= 100°C
V
R
= 300 V
I
F
= 200 A
100 A
50 A
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
I
F
= 200 A
100 A
50 A
t
fr
IXYS reserves the right to change limits, conditions and dimensions.
©
20110519a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved