Datasheet

DSEI2x101-06A
ns
FRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
1200
I A
V
F
1.25
R 0.50 K/W
V
R
=
min.
96
t = 10 ms
Applications:
V
RRM
V600
3T
VJ
V°C=
T
VJ
°C=mA20
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 70°C
d =
P
tot
250 WT
C
°C=
T
VJ
150 °C-40
V
I
RRM
=
=
600
96
100
T
VJ
= 45°C
DSEI2x101-06A
V
A
600
V480
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
1.40
T
VJ
°C=25
C
J
j
unction capacitance
V = V; T
125
V
F0
V0.70T
VJ
= 150°C
r
F
4.7
f = 1 MHz = °C25
mΩ
V1.17T
VJ
=°C
I
F
=A
V
100
1.70
I
F
=A200
I
F
=A200
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
27 A
T
VJ
=°C
reverse recovery time
A40
80
150
ns
(50 Hz), sine
t
rr
= 35 ns
● Housing:
Fast Recovery Epitaxial Diode
Low Loss and Soft Recovery
Parallel legs
SOT-227B (minibloc)
●
rIndustry standard outline
●
rCu base plate internal DCB isolated
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
R
VJ
I
RM
max. reverse recovery current
I
F
=A;100
25
T=100°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V300
T
VJ
=°C25
T=100°C
VJ
mA
107400 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Low leakage current
● Short recovery time
● Improved thermal behaviour
● Low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20110519a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved