Datasheet

© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
(BR)min
① V
RRM
Anode Cathode
V V V on stud on stud
900 - 800 DS
75-08B DSI 75-08B
1300 - 1200 DS 75-12B DSI 75-12B
1300 1300 1200 DSA 75-12B DSAI 75-12B
1700 1760 1600 DSA 75-16B DSAI 75-16B
1900 1950 1800 DSA 75-18B DSAI 75-18B
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
I
F(RMS)
T
VJ
= T
VJM
160 A
I
F(AV)M
T
case
= 100°C; 180° sine 110 A
P
RSM
DSA(I) types, T
VJ
= T
VJM
, t
p
= 10 ms20kW
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 1400 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 1500 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 1250 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 1310 A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz), sine 9800 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 9450 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 7820 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 7210 A
2
s
T
VJ
-40...+180 °C
T
VJM
180 °C
T
stg
-40...+180 °C
M
d
Mounting torque 2.4-4.5 Nm
21-40 lb.in.
Weight 21 g
V
RRM
= 800-1800 V
I
F(RMS)
= 160 A
I
F(AV)M
= 110 A
Features
●
International standard package,
JEDEC DO-203 AB (DO-5)
●
Planar glassivated chips
Applications
●
High power rectifiers
●
Field supply for DC motors
●
Power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Symbol Test Conditions Characteristic Values
I
R
T
VJ
= T
VJM
; V
R
= V
RRM
£ 6mA
V
F
I
F
= 150 A; T
VJ
= 25°C £ 1.17 V
V
T0
For power-loss calculations only 0.75 V
r
T
T
VJ
= T
VJM
2mW
R
thJC
DC current 0.5 K/W
R
thJH
DC current 0.9 K/W
d
S
Creepage distance on surface 4.05 mm
d
A
Strike distance through air 3.9 mm
a Max. allowable acceleration 100 m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 75 DSI 75
DSA 75 DSAI 75
744
Rectifier Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AB
1/4-28UNF
DS DSI
DSA DSAI
C
A
A
C