Datasheet

DSA 30 C 200 PB
advanced
Schottky Diode Gen ²
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
120
I A
V
F
0.94
R
1.75
K/W
V
R
=
1 2 3
min.
15
t = 10 ms
Applications:
V
RRM
V
200
0.25
T
VJ
V°C=
T
VJ
°C=mA
2.5
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 150°C
d =
P
tot
85
WT
C
°C=
T
VJ
175
°C
-55
V
I
RRM
=
=
200
15
15
T
VJ
= 45°C
DSA 30 C 200 PB
V
A
200
V200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions Unit
1.10
T
VJ
°C=25
C
J
j
unction capacitance
V= V;24 T
125
V
F0
V
0.53
T
VJ
= 175°C
r
F
10.8
Ω
f = 1 MHz = °C25
m
V
0.78
T
VJ
=°C
I
F
=A
V
15
0.95
I
F
=A30
I
F
=A30
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
(50 Hz), sine
V
F
= 0.78
V
● Housing:
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
TO-220
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R
VJ
mA
67 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Very low Vf
● Extremely low switching losses
● low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
FAV
average forward current
FAV
125
IXYS reserves the right to change limits, conditions and dimensions. 20100628
Data according to IEC 60747and per diode unless otherwise specified
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