Datasheet

DPG 60 C 300 HB
200 600 10000 400 800
20
30
40
50
60
70
80
90
100
0.00001 0.0001 0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
10
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0 200 400 600 800 1000
0
100
200
300
400
500
600
700
0
5
10
15
20
25
30
35
V
FR
di
F
/dt
V
200 600 10000 400 800
5
15
25
0
10
20
30
0001001
0
100
200
300
400
500
600
700
I
RM
Q
r I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/ s
A
V
C
t
rr
ns
t
fr
Z
thJC
A/ s
ns
A/ s
A/ s
0.0 0.4 0.8 1.2 1.6
0
10
20
30
40
50
60
70
8
0
25°C
I
F
=60A
30 A
15 A
I
F
=60A
30 A
15 A
I
RM
Q
rr
I
F
= 60A
30 A
15 A
V
FR
t
fr
125°C
V
R
=200V
I
F
=30A
di
F
/dt = 500 A/µs
T
VJ
= 125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V
I
F
=30A
DPG60C300QB
T
VJ
= 125°C
V
R
= 200 V
T
VJ
=150°C
T
VJ
= 125°C
V
R
= 200 V
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
vs. -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
iR
thi
t
i
[K/W] [s]
1 0.505 0.005
2 0.195 0.0003
3 0.250 0.041
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0629
Data according to IEC 60747and per diode unless otherwise specified