Datasheet

DHG 10 I 1200PM
advanced
Sonic-FRD
Symbol Definition
R a t i n g s
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
µA
V
70
I
FAV
A
V
F
2.69
R
thJC
4.00 K/W
V
R
=
13
min.
10
ms (50 Hz), sine
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
V
RRM
V1200
15
T
VJ
V
°C=
T
VJ
°C=
mA
1.5
Package:
Part number
V
R
=
T
VJ
=
°CI
F
=A
V
T
C
=30°C
P
tot
31 W
T
C
°C=
A
I
RM
8.5
/dt
I
F
=A;
V
R
=V
A
t
rr
E
A
S
tbd mJ
T
VJ
°C
=
I
A
S
=A;L = µH
I
A
R
A
V
A
=
tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
150
°C
-55
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
V
I
t
RRM
FAV
rr
=
=
=
1200
10
75
10
T
VJ
=45°C
10
-di
F
= 350 A/µs
800
tbd 100
DHG 10 I 1200PM
V
A
ns
1200
V
1200
25
25
25
t
p
=10
25
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
non-repetitive avalanche energy
repetitive avalanche current
reverse recovery time
Conditions Unit
3.56
T
VJ
°C
=
25
C
J
tbd pF
j
unction capacitance
V
R
=V;
600
T
VJ
125
V
F0
V
1.60
T
VJ
= 150 °C
r
F
73.6
Ω
f = 1 MHz
=°C
25
m
TO-220FPAC
V2.38T
VJ
=°CI
F
=A
V
10 125
3.33
I
F
=A20
I
F
=A20
ns75
ns
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
T
VJ
°C=25
T
VJ
°C= 125
T
VJ
°C=25
T
VJ
°C= 125
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0629
* Data according to IEC 60747and per diode unless otherwise specified