Datasheet

DB92546m-AAS/A3
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (V
F
) 1.0 1.15 1.3 V I
F
= 10mA
Reverse Current (I
R
) 10 µA V
R
= 4V
Output Collector-emitter Breakdown (BV
CEO
) 55 V I
C
= 0.5mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
) 6 V I
E
= 100µA
Collector-emitter Dark Current (I
CEO
) 100 nA V
CE
= 20V
Coupled Current Transfer Ratio (CTR) (Note 2)
TLP521, TLP521-2, TLP521-4 50 600 % 5mA I
F
, 5V V
CE
CTR selection available BL 200 600 %
GB 100 600 %
GB 30 % 1mA I
F
, 0.4V V
CE
Collector-emitter Saturation VoltageV
CE (SAT)
0.4 V 8mA I
F
, 2.4mA I
C
-GB 0.4 V 1mA I
F
, 0.2mA I
C
Input to Output Isolation Voltage V
ISO
5300 V
RMS
See note 1
7500 V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
Ω V
IO
= 500V (note 1)
Response Time (Rise), tr 4 µs V
CE
= 2V ,
Response Time (Fall), tf 3 µs I
C
= 2mA, R
L
= 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
7/4/03
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
55V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)