Datasheet
Data Sheet No. PD60250
Typical Connection
Features
•Floating channel designed for bootstrap operation
•Fully operational to +600 V
•Tolerant to negative transient voltage, dV/dt immune
•Gate drive supply range from 10 V to 20 V
•Undervoltage lockout
•3.3 V, 5 V, and 15 V logic input compatible
•Matched propagation delay for both channels
•Outputs in phase with inputs
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
600 V max.
I
O
+/- 130 mA/270 mA
V
OUT
10 V - 20 V
t
on/off
(typ.) 160 ns/150 ns
Delay Matching 50 ns
IRS2101(S)PbF
Description
The IRS2101 is a high voltage, high speed power
MOSFET and IGBT driver with independent high-side
and low-side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. The logic input
is compatible with standard CMOS or LSTTL output,
down to 3.3 V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to
drive an N-channel power MOSFET or IGBT in the high-
side configuration which operates up to 600 V.
www.irf.com 1
(Refer to Lead Assignments for correct pin configuration). This diagram shows electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
IRS2101
Packages
8-Lead PDIP
IRS2101
8-Lead SOIC
IRS2101S
• RoHS compliant










