Datasheet

IRLZ24N
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55   V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  0.061  V/°C Reference to 25°C, I
D
= 1mA
  0.060 V
GS
= 10V, I
D
= 11A 
  0.075 Ω V
GS
= 5.0V, I
D
= 11A 
  0.105 V
GS
= 4.0V, I
D
= 9.0A 
V
GS(th)
Gate Threshold Voltage 1.0  2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 8.3   S V
DS
= 25V, I
D
= 11A
  25 V
DS
= 55V, V
GS
= 0V
  250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100 V
GS
= 16V
Gate-to-Source Reverse Leakage   -100 V
GS
= -16V
Q
g
Total Gate Charge   15 I
D
= 11A
Q
gs
Gate-to-Source Charge   3.7 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge   8.5 V
GS
= 5.0V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time  7.1  V
DD
= 28V
t
r
Rise Time  74  I
D
= 11A
t
d(off)
Turn-Off Delay Time  20  R
G
= 12Ω, V
GS
= 5.0V
t
f
Fall Time  29  R
D
= 2.4Ω, See Fig. 10 
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance  480  V
GS
= 0V
C
oss
Output Capacitance  130  pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance  61   = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
DSS
Drain-to-Source Leakage Current
I
GSS
L
S
Internal Source Inductance  7.5 
L
D
Internal Drain Inductance  4.5 
µA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage   1.3 V T
J
= 25°C, I
S
= 11A, V
GS
= 0V 
t
rr
Reverse Recovery Time  60 90 ns T
J
= 25°C, I
F
= 11A
Q
rr
Reverse RecoveryCharge  130 200 nC di/dt = 100A/µs 
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
  72
  18
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 I
SD
≤ 11A, di/dt ≤ 290A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
 V
DD
= 25V, starting T
J
= 25°C, L = 790µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
 Pulse width ≤ 300µs; duty cycle ≤ 2%.