Datasheet

www.irf.com 1
12/8/04
IRLR7807ZPbF
IRLU7807ZPbF
HEXFET
®
Power MOSFET
Notes  through  are on page 11
Applications
Benefits
l Very Low RDS(on) at 4.5V V
GS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l Lead-Free
D-Pak
IRLR7807Z
I-Pak
IRLU7807Z
PD - 95777A
V
DSS
R
DS(on)
max
Qg (typ
.)
30V
13.8m
:
7.0nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C
Maximum Power Dissipation
g
W
P
D
@T
C
= 100°C
Maximum Power Dissipation
g
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 3.75
R
θ
JA
Junction-to-Ambient (PCB Mount)
g
––– 50 °C/W
R
θ
JA
Junction-to-Ambient ––– 110
40
Max.
43
f
30 f
170
± 20
30
0.27
20
300 (1.6mm from case)
-55 to + 175