Datasheet
IRLR/U3110ZPbF
2 www.irf.com
S
D
G
S
D
G
El
ectr
i
ca
l Ch
aracter
i
st
i
cs
@ T
J
=
2
5
°C (
un
l
ess
ot
h
erw
i
se
spec
ifi
e
d)
Parameter Min. T
y
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 100 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.077 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 11 14
m
Ω
––– 12 16
V
GS(th)
Gate Threshold Volta
g
e 1.0 ––– 2.5 V
g
fs Forward Transconductance 52 ––– ––– S
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
µ
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
g
e ––– ––– -200
Q
g
Total Gate Char
g
e ––– 34 48
Q
gs
Gate-to-Source Char
g
e ––– 10 ––– nC
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 15 –––
t
d(on)
Turn-On Dela
y
Time ––– 24 –––
t
r
Rise Time ––– 110 –––
t
d(off)
Turn-Off Dela
y
Time ––– 33 ––– ns
t
f
Fall Time ––– 48 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
g
e
and center of die contact
C
iss
Input Capacitance ––– 3980 –––
C
oss
Output Capacitance ––– 310 –––
C
rss
Reverse Transfer Capacitance ––– 130 ––– pF
C
oss
Output Capacitance ––– 1820 –––
C
oss
Output Capacitance ––– 170 –––
C
oss
eff.
Effective Output Capacitance ––– 320 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current ––– ––– 63
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 250
(Body Diode)
V
SD
Diode Forward Volta
g
e––––––1.3V
t
rr
Reverse Recover
y
Time –––3451ns
Q
rr
Reverse Recover
y
Char
g
e ––– 42 63 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 4.5V, I
D
= 32A
V
GS
= 16V
V
GS
= -16V
V
DS
= 50V
V
DS
= 25V, I
D
= 38A
I
D
= 38A
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 38A, V
GS
= 0V
T
J
= 25°C, I
F
= 38A, V
DD
= 50V
di/dt = 100A/
µ
s
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 38A
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 4.5V
V
DD
= 50V
I
D
= 38A
R
G
= 3.7
Ω