Datasheet

IRLML5203
2 www.irf.com
PROVISIONAL
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.2 V T
J
= 25°C, I
S
= -1.3A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 17 26 ns T
J
= 25°C, I
F
= -1.3A
Q
rr
Reverse Recovery Charge ––– 12 18 nC di/dt = -100A/µs 
Source-Drain Ratings and Characteristics
A
-24



-1.3
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
 Surface mounted on FR-4 board, t ≤ 5sec.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 98 V
GS
= -10V, I
D
= -3.0A 
––– ––– 165 V
GS
= -4.5V, I
D
= -2.6A 
V
GS(th)
Gate Threshold Voltage -1.0 ––– -2.5 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 3.1 ––– ––– S V
DS
= -10V, I
D
= -3.0A
––– ––– -1.0 V
DS
= -24V, V
GS
= 0V
––– ––– -5.0 V
DS
= -24V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 9.5 14 I
D
= -3.0A
Q
gs
Gate-to-Source Charge ––– 2.3 3.5 nC V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.6 2.4 V
GS
= -10V 
t
d(on)
Turn-On Delay Time ––– 12 ––– V
DD
= -15V 
t
r
Rise Time ––– 18 ––– I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 88 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 52 ––– V
GS
= -10V
C
iss
Input Capacitance ––– 510 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 71 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 43 ––– ƒ = 1.0MHz
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
mΩ
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns