Datasheet
IRLL014NPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, I
D
= 1mA
0.14 V
GS
= 10V, I
D
= 2.0A
0.20 Ω V
GS
= 5.0V, I
D
= 1.2A
0.28 V
GS
= 4.0V, I
D
= 1.0A
V
GS(th)
Gate Threshold Voltage 1.0 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 2.3 S V
DS
= 25V, I
D
= 1.0A
25
µA
V
DS
= 55V, V
GS
= 0V
250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage -100 V
GS
= -16V
Q
g
Total Gate Charge 9.5 14 I
D
= 2.0A
Q
gs
Gate-to-Source Charge 1.1 1.7 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge 3.0 4.4 V
GS
= 10V, See Fig. 6 and 9
t
d(on)
Turn-On Delay Time 5.1 V
DD
= 28V
t
r
Rise Time 4.9
ns
I
D
= 2.0A
t
d(off)
Turn-Off Delay Time 14 R
G
= 6.0Ω
t
f
Fall Time 2.9 R
D
= 14Ω, See Fig. 10
C
iss
Input Capacitance 230 V
GS
= 0V
C
oss
Output Capacitance 66 pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance 30 = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 2.0A, di/dt ≤ 170A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 4.0mH
R
G
= 25Ω, I
AS
= 4.0A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.0 V T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time 41 61 ns T
J
= 25°C, I
F
= 2.0A
Q
rr
Reverse RecoveryCharge 73 110 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
16
1.3
A