Datasheet

IRL1404ZPbF
IRL1404ZSPbF
IRL1404ZLPbF
HEXFET
®
Power MOSFET
V
DSS
= 40V
R
DS(on)
= 3.1mΩ
I
D
= 75A
09/27/10
www.irf.com 1
Description
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
S
D
G
Features
l Logic Level
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
D
2
Pak
IRL1404ZSPbF
TO-220AB
IRL1404ZPbF
TO-262
IRL1404ZLPbF
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current c
P
D
@T
C
= 25°C
Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
h
I
AR
Avalanche Current c
A
E
AR
Repetitive Avalanche Energy g
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.65 °C/W
R
θ
CS
Case-to-Sink, Flat, Greased Surface
i
0.50 –––
R
θ
JA
Junction-to-Ambient
i
––– 62
R
θ
JA
Junction-to-Ambient (PCB Mount) j
––– 40
490
220
See Fig.12a, 12b, 15, 16
230
1.5
± 16
Max.
200
140
790
75
-55 to + 175
300 (1.6mm from case )
10 lbf
y in (1.1N y m)
l Lead-Free
PD - 95446A