Datasheet

8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014
IRGP30B120KD-EP
Fig.21 - Typ. Diode E
rec
vs. I
F
Tj=125°C
800
1000
1200
1400
1600
1800
2000
2200
2400
0 102030405060
I
F
(A)
E n e r g y ( u J )
5
Ω
10
Ω
22
Ω
51
Ω
Fig.23 - Typ. Gate Charge vs. V
GE
I
C
=25A; L=600μH
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
Q
G
, Total Gate Charge (nC)
V
G E
( V )
600V
800V
Fig.22 - Typical Capacitance vs V
CE
V
GE
=0V; f=1MHz
10
100
1000
10000
0 20406080100
V
CE
(V)
C a p a c I t a n c e ( p F )
C
ies
C
oes
C
res