Datasheet

2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 29, 2014
IRGP30B120KD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 V
V
GE
= 0V,I
c
=250 μA
Δ
V
(BR)CES
/
Δ
Tj Temperature Coeff. of Breakdown Voltage
+1.2 V/°C V
GE
= 0V, I
c
= 1 mA ( 25 -125
o
C )
2.28 2.48
I
C
= 25A, V
GE
= 15V 5, 6
Collector-to-Emitter Saturation
2.46 2.66
I
C
= 30A, V
GE
= 15V 7, 9
V
CE(on)
Voltage
3.43 4.00 V
I
C
= 60A, V
GE
= 15V
10
2.74 3.10
I
C
= 25A, V
GE
= 15V, T
J
= 125°C
11
2.98 3.35
I
C
= 30A, V
GE
= 15V, T
J
= 125°C
V
GE(th)
Gate Threshold Voltage
4.0 5.0 6.0 V
V
CE
= V
GE
, I
C
= 250 μA
9,10,11,12
Δ
V
GE(th )
/
Δ
Tj Temperature Coeff. of Threshold Voltage
- 1.2
mV/
o
C
V
CE
= V
GE
, I
C
= 1 mA ( 25 -125
o
C )
g
fe
Forward Transconductance
14.8 16.9 19.0 S
V
CE
= 50V, I
C
= 25A, PW=80μs
250
V
GE
= 0V,V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current
325 675 μA
V
GE
= 0v, V
CE
= 1200V, T
J
=125°C
2000
V
GE
= 0v, V
CE
= 1200V, T
J
=150°C
1.76 2.06
I
C
= 25A
V
FM
Diode Forward Voltage Drop
1.86 2.17 V
I
C
= 30A
8
1.87 2.18
I
C
= 25A, T
J
= 125°C
2.01 2.40
I
C
= 30A, T
J
= 125°C
I
GES
Gate-to-Emitter Leakage Current
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
Q
g
Total Gate charge (turn-on)
169 254
I
C
= 25A 23
Q
ge
Gate - Emitter Charge (turn-on)
19 29 nC
V
CC
=600V CT 1
Q
gc
Gate - Collector Charge (turn-on)
82 123
V
GE
= 15V
E
on
Turn-On Switching Loss
1066 1250
I
C
= 25A, V
CC
= 600V
CT 4
E
off
Turn-Off Switching Loss
1493 1800 μJ
V
GE
= 15V, Rg = 5
Ω,
L=200μH
WF1
E
tot
Total Switching Loss
2559 3050
T
J
= 25
o
C, Energy losses include tail
and diode rev erse recovery
WF2
E
on
Turn-on Switching Loss
1660 1856
Ic =25A, V
CC
=600V
13, 15
E
off
Turn-off Switching Loss
2118 2580 μJ
V
GE
= 15V, Rg = 5
Ω,
L=200μH
CT 4
E
tot
Total Switching Loss
3778 4436
T
J
= 125
o
C, Energy losses include tail
and diode rev erse recovery
WF1 & 2
td(on)
Turn - on delay time
50 65
Ic =25A, V
CC
=600V
14, 16
tr
Rise time
25 35 ns
V
GE
= 15V, Rg = 5Ω,
L=200μH
CT 4
td(off) Turn - off delay time
210 230 T
J
= 125
o
C,
WF1
tf Fall time
60 75
WF2
C
ies
Input Capacitance
2200
V
GE
= 0V
C
oes
Output Capacitance
210 pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance
85
f = 1.0 MHz
T
J
=150
o
C, Ic = 120A
4
RBSOA
Reverse bias safe operating area
FULL SQUARE
V
CC
= 1000V, V
P
= 1200V
CT 2
Rg = 5
Ω
, V
GE
= +15V to 0 V
T
J
= 150
o
C
CT 3
SCSOA
Short Circuit Safe Operating Area
10 ---- ---- μs
V
CC
= 900V,V
P
= 1200V
WF4
Rg = 5
Ω
, V
GE
= +15V to 0 V
E
rec
Reverse recovery energy of the diode
1820 2400 μJ T
J
= 125
o
C
17,18,19
trr
Diode Reverse recovery time
300 ns
V
CC
= 600V, Ic = 25A
20, 21
Irr
Peak Reverse Recovery Current
34 38 A
V
GE
= 15V, Rg = 5Ω,
L=200μH
CT 4 , W F 3
Le
Internal Emitter Inductance
13 nH
Measured 5 mm from the package.