Datasheet

IRG4PH50KDPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 180 270 I
C
= 24A
Q
ge
Gate - Emitter Charge (turn-on) — 25 38 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) — 70 110 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 87 —
t
r
Rise Time — 100 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 140 300 I
C
= 24A, V
CC
= 800V
t
f
Fall Time — 200 300 V
GE
= 15V, R
G
= 5.0Ω
E
on
Turn-On Switching Loss — 3.83 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 1.90 — mJ and diode reverse recovery
E
ts
Total Switching Loss — 5.73 7.9 See Fig. 9,10,18
t
sc
Short Circuit Withstand Time 10 — — µs V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0Ω
t
d(on)
Turn-On Delay Time — 67 — T
J
= 150°C, See Fig. 10,11,18
t
r
Rise Time — 72 — I
C
= 24A, V
CC
= 800V
t
d(off)
Turn-Off Delay Time — 310 — V
GE
= 15V, R
G
= 5.0Ω,
t
f
Fall Time — 390 — Energy losses include "tail"
E
ts
Total Switching Loss — 8.36 — mJ and diode reverse recovery
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 2800 — V
GE
= 0V
C
oes
Output Capacitance — 140 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 53 — ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time — 90 135 ns T
J
= 25°C See Fig.
— 164 245 T
J
= 125°C 14 I
F
= 16A
I
rr
Diode Peak Reverse Recovery Current — 5.8 10 A T
J
= 25°C See Fig.
— 8.3 15 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge — 260 675 nC T
J
= 25°C See Fig.
— 680 1838 T
J
= 125°C 16 di/dt = 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery — 120 — A/µs T
J
= 25°C See Fig.
During t
b
—76— T
J
= 125°C 17
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown VoltageS 1200 — — V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 0.91 — V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.77 3.5 I
C
= 24A V
GE
= 15V
— 3.28 — V I
C
= 45A See Fig. 2, 5
— 2.54 — I
C
= 24A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -10 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance T 13 19 — S V
CE
= 100V, I
C
= 24A
I
CES
Zero Gate Voltage Collector Current — — 250 µA V
GE
= 0V, V
CE
= 1200V
— — 6500 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 2.5 3.5 V I
C
= 16A See Fig. 13
— 2.1 3.0 I
C
= 16A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)