Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-247AC 1200 V 45 A

IRG4PH50KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

n-channel

CES

= 1200V

CE(on) typ.

= 2.77V

= 15V, I

= 24A

PD- 95189

TO-247AC

Short Circuit Rated

UltraFast IGBT

Parameter Max. Units

CES

Collector-to-Emitter Voltage 1200 V

@ T

= 25°C Continuous Collector Current 45

@ T

= 100°C Continuous Collector Current 24

Pulsed Collector Current Q 90 A

Clamped Inductive Load Current R 90

@ T

= 100°C Diode Continuous Forward Current 16

Diode Maximum Forward Current 90

Short Circuit Withstand Time 10 µs

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 200

@ T

= 100°C Maximum Power Dissipation 78

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

04/26/04

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ––– ––– 0.64

θJC

Junction-to-Case - Diode ––– ––– 0.83 °C/W

θCS

Case-to-Sink, flat, greased surface ––– 0.24 –––

θJA

Junction-to-Ambient, typical socket mount ––– ––– 40

Wt Weight ––– 6 (0.21) ––– g (oz)

Thermal Resistance

Absolute Maximum Ratings

Features

• High short circuit rating optimized for motor control,

=10µs, V

= 720V , T

= 125°C,

= 15V

• Combines low conduction losses with high

switching speed

• Tighter parameter distribution and higher efficiency

than previous generations

• IGBT co-packaged with HEXFRED

ultrafast,

ultrasoft recovery antiparallel diodes

• Latest generation 4 IGBT's offer highest power density

motor controls possible

• HEXFRED

diodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise, EMI and

switching losses

• This part replaces the IRGPH50KD2 and IRGPH50MD2

products

• For hints see design tip 97003

Benefits

www.irf.com 1

• Lead-Free

Summary of content (10 pages)

PAGE 1
PD- 95189 IRG4PH50KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Lead-Free C VCES = 1200V VCE(on) typ.
PAGE 2
IRG4PH50KDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 — Temperature Coeff. of Breakdown Voltage — 0.91 Collector-to-Emitter Saturation Voltage — 2.77 — 3.28 — 2.54 Gate Threshold Voltage 3.0 — Temperature Coeff.
PAGE 3
IRG4PH50KDPbF 30 F o r b o th : LOAD CURRENT (A) 25 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W 20 S q u a re w a v e : 6 0% of rate d volta ge 15 I 10 Id e a l d io d e s 5 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 150 °C 10 TJ = 25 °C V = 15V 20µs PULSE WIDTH GE 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig.
PAGE 4
IRG4PH50KDPbF 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 V = 15V 80 us PULSE WIDTH GE IC = 48A 3.5 3.0 IC = 24A 2.5 IC = 12A 2.0 1.5 -60 -40 -20 TC , Case Temperature ( °C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 D = 0.
PAGE 5
IRG4PH50KDPbF C, Capacitance (pF) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 3000 Cies 2000 1000 0 Coes Cres 1 10 20 VGE , Gate-to-Emitter Voltage (V) 4000 12 8 4 VCE , Collector-to-Emitter Voltage (V) 100 V CC = 800V 960V V GE = 15V TJ = 25 ° C I C = 24A 6.2 5.8 5.4 0 10 20 30 40 50 RG R, GGate Resistance , Gate Resistance(Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 80 120 160 200 Fig.
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IRG4PH50KDPbF 1000 = 5.0Ω Ohm = 150 °C = 800V 960V = 15V I C, Collector Current (A) 15 RG TJ VCC CC VGE 10 5 0 VGE = 20V T J = 125 oC 100 10 SAFE OPERATING AREA 0 10 20 30 40 1 50 1 I C , Collector Current (A) 10 100 1000 10000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector Current 1000 Instantaneous Forward Current ( A ) Total Switching Losses (mJ) 20 100 T J = 150°C 10 T J = 125°C T J = 25°C 1 0.0 2.
PAGE 7
300 40 IRG4PH50KDPbF VR = 200 V T J = 125°C T J = 25°C VR = 200V T J = 125°C T J = 25°C 30 200 I R R M - (A ) trr - (ns) IF = 3 2 A I F = 1 6A I F = 8 .0 A I F = 32A 20 I F = 16 A 100 I F = 8 .0A 10 0 100 d i f /dt - (A /µ s) 0 100 1000 1000 di f /dt - (A /µ s) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs.
PAGE 8
IRG4PH50KDPbF 90% Vge +Vge Same ty pe device as D .U.T. V ce Ic 9 0 % Ic 10% Vce Ic 5 % Ic 430µF 80% of Vce D .U .T. td (o ff) tf E o ff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T .
PAGE 9
IRG4PH50KDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 480V 960V 4 X I C @25°C 50V 600 0µF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20.
PAGE 10
IRG4PH50KDPbF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot.