Datasheet

IRG4PC50FDPbF
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
Total Switchig Losses (mJ)
Total Switchig Losses (mJ)
3.50
4.00
4.50
5.00
0 102030405060
G
A
R , Gate Resistance
(
Ω
)
V = 480V
V = 15V
T = 25°C
I = 39A
CC
GE
J
C
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
A
T , Junction Tem
p
erature
(
°C
)
J
I = 20A
I = 39A
I = 78A
R = 5.0
Ω
V = 15V
V = 480V
G
GE
CC
C
C
C
0
4
8
12
16
20
0 40 80 120 160 200
GE
V , G ate-to-E m itter V oltage (V)
g
Q , Total Gate Char
g
e
(
nC
)
A
V = 40 0V
I = 39A
CE
C
0
2000
4000
6000
8000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Volta
g
e
(
V
)
A
C
ies
C
res
C
oes
V
GE
= 0V f = 1 MHz
Cies = Cge + Cgc + Cce SHORTED
Cres = Cce
Coes = Cce + Cgc