Datasheet

IRG4PC50FDPbF
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Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
CE
V , C ollector-to-Em itter Voltage (V)
V = 15V
80
µ
s PULSE W IDTH
GE
A
T , Junction Tem
p
erature
(
°C
)
J
I = 78A
I = 39A
I = 20A
C
C
C
0
10
20
30
40
50
60
70
25 50 75 100 125 150
Maximum DC Collector Current (A)
T , Case Temperature (°C)
C
V = 15V
GE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Therm al Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. P eak T = P x Z + T
1
2
J
DM
thJC
C