Datasheet

ManualsBrandsIR ManualsDiscrete SemiconductorsIGBT TO-247AC 600 V 70 A

IRG4PC50FDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

n-channel

CES

= 600V

CE(on) typ.

= 1.45V

= 15V, I

= 39A

Parameter Min. Typ. Max. Units

θJC

Junction-to-Case - IGBT ------ ------ 0.64

θJC

Junction-to-Case - Diode ------ ------ 0.83 °C/W

θCS

Case-to-Sink, flat, greased surface ------ 0.24 ------

θJA

Junction-to-Ambient, typical socket mount ----- ----- 40

Wt Weight ------ 6 (0.21) ------ g (oz)

Thermal Resistance

Fast CoPack IGBT

04/29/04

Absolute Maximum Ratings

Parameter Max. Units

CES

Collector-to-Emitter Voltage 600 V

@ T

= 25°C Continuous Collector Current 70

@ T

= 100°C Continuous Collector Current 39

Pulsed Collector Current Q 280 A

Clamped Inductive Load Current R 280

@ T

= 100°C Diode Continuous Forward Current 25

Diode Maximum Forward Current 280

Gate-to-Emitter Voltage ± 20 V

@ T

= 25°C Maximum Power Dissipation 200

@ T

= 100°C Maximum Power Dissipation 78

Operating Junction and -55 to +150

STG

Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED

ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-247AC package

• Lead-Free

Benefits

• Generation -4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for

equivalent industry-standard Generation 3 IR IGBT's

PD -95225

TO-247AC

Summary of content (10 pages)

PAGE 1
PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
PAGE 2
IRG4PC50FDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 Temperature Coeff.
PAGE 3
IRG4PC50FDPbF 50 D uty c yc le: 50% T J = 125°C T sink = 90°C G ate drive as specified Turn-on loss es include effects of reverse rec overy Po w e r D is s ip a tio n = 4 0 W Load Current ( A ) 40 30 6 0% of rate d vo lta g e 20 10 A 0 0.1 1 10 100 f, Frequenc y (k Hz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 T J = 1 5 0°C 10 T J = 2 5 °C VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 1 0.
PAGE 4
IRG4PC50FDPbF 2.5 V G E = 15V V C E , C olle c to r-to-E m itte r V olta ge (V ) M axim um D C C ollector C urrent (A ) 70 60 50 40 30 20 10 0 V GE = 15V 8 0 µ s P U L S E W ID T H I C = 78A 2.0 IC = 39 A 1.5 I C = 20A A 1.0 25 50 75 100 125 150 -60 T C , C as e Te m p e ra ture (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 T J , J u n c tio n T e m p e ra tu re (°C ) Fig. 5 - Typical Collector-to-Emitter Voltage vs.
PAGE 5
IRG4PC50FDPbF C, Capacitance (pF) 20 SHORTED V G E , G a te -to -E m itte r V o lta ge (V ) VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc 8000 6000 C ies 4000 Co e s 2000 C res A 0 1 10 VCE = 40 0 V IC = 39A 16 12 8 4 A 0 100 0 40 V C E, Collector-to-Emitter Voltage (V) Total Switchig Losses (mJ) Total Switchig Losses (mJ) 100 4.50 4.00 A 0 10 20 30 40 50 R G , G ate R esistance ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.
PAGE 6
IRG4PC50FDPbF RG TJ V CC V GE 1000 = 5.0 Ω = 150°C = 480V = 15V I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Switchig Losses (mJ) 16 12 8 4 A 0 0 20 40 60 VGGE E= 20V T J = 12 5°C S A FE O P E R A TIN G A R E A 100 10 1 80 1 10 100 1000 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , Collector-to-Em itter Current (A ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs.
PAGE 7
IRG4PC50FDPbF 100 140 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C V R = 200V T J = 125°C T J = 25°C 120 I IR R M - (A ) t rr - (ns) 100 I F = 50A 80 I F = 25A I F = 5 0A I F = 25A 10 I F = 10A IF = 10A 60 40 20 100 1 100 1000 di f /dt - (A/µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 d i f /d t - (A /µ s) Fig. 15 - Typical Recovery Current vs.
PAGE 8
IRG4PC50FDPbF 90% V ge +V ge Same type device as D .U.T. V ce Ic 90% Ic 10% V ce Ic 5% Ic 430µF 80% of Vce D .U .T. td (off) tf E off = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µ S V ce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T .
PAGE 9
IRG4PC50FDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* R L= 0 - 480V 480V 4 X IC @25°C 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20.
PAGE 10
IRG4PC50FDPbF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot.